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In this work, the thermal annealing effects on the microstructural, optical constants and electrical properties of as-grown vacuum evaporated CuSbS 2 thin films have been investigated. The annealing temperatures in vacuum were varied in the range 100–220 °C. CuSbS 2 thin films were deposited on heated glass substrates. These films were characterized for their structural, optical and...
Carbon nanotube films (CNT-1 and CNT-2) were fabricated in a vertical CVD gas flow reactor with water sealing. CNT-1 films consist of ordered crystalline carbon nanotubes, while CNT-2 are defective carbon nanotube films. The films are flexible and transferrable and can be used as binder-free anodes for lithium-ion batteries (LIB). Electrochemical measurements show that CNT-2 possess a reversible capacity...
High-temperature properties of boron nitride platelets (200–800 nm in width and 30–50 nm in thickness) were systematically evaluated through thermogravimetric analysis (TGA) in combination with differential scanning calorimetry (DSC). X-Ray Diffraction (XRD) studies confirmed the hexagonal graphitic-like structure of the material, while Fourier-Transform Infrared Spectroscopy (FT-IR) indicated the...
An AlPO 4 oxidation-protective coating was successfully prepared on SiC pre-coated carbon/carbon composites (SiC–C/C) by pulse arc discharge deposition. The structure and oxidation resistance of the as-prepared AlPO 4 /SiC multilayer coatings were investigated. The results were confirmed by oxidation experiments performed at 1573 K, 1673 K and 1773 K, which demonstrated that the AlPO...
InN epilayers were deposited on nitrided sapphire substrates using plasma-assisted molecular beam epitaxy (PAMBE) system. The physical properties of InN films under different growth temperatures were thoroughly studied. The XRD results indicated that as-prepared InN films without Indium droplets were preferentially oriented in the c-axis direction. The SEM results showed that the InN films grown in...
We report the semiconducting behavior at room temperature and a metal-semiconductor transition (MST) at lower temperature in copper sulfides (Cu x S) thin films. Cu x S thin films, deposited by direct magnetron sputtering technique, are found to be of CuS-Cu 1.8 S mixed phase by XRD. The deposited films exhibit low electrical resistivity close to ∼10 −4 Ω cm at room...
CeO 2 /Dy 2 O 3 multilayer films were deposited on Si substrates using electron-beam evaporation, and Dy 3+ ions were doped in CeO 2 after samples were annealed in weak reducing atmosphere at high temperature. White light emissions were observed from CeO 2 :Dy 3+ films. The luminescence properties of CeO 2 :Dy 3+ films were investigated...
Structural and thermodynamic properties of xenon incorporated in amorphous carbon films deposited by means of a sputtering system free of vacuum pumping during the deposition were investigated by visible Raman (Vis–Raman) scattering and thermal desorption spectroscopy (TDS), respectively. Vis–Raman measurements, carried out before and after the xenon desorption, revealed a polycrystalline material...
We prepared Mg-doped Sb 4 Te films and investigated their structural, electrical and optical properties. It was found that Mg could increase the crystallization temperature and improve the activation energy of crystallization as well as amorphous state stability of the Sb 4 Te film. Compared with Ge 2 Sb 2 Te 5 , the optimal composition of Mg 19.8 (Sb...
Two-dimensional antiferromagnetism observed on flat Cr monolayers deposited on Ag(100) has been investigated under various growth conditions. Cr monolayer domains are found to grow within the temperature range of 373–453 K while multilayer growth mode is prevalent at room temperature (RT). In agreement with theoretical predictions, a c(2 × 2) antiferromagnetic configuration is observed on Cr monolayer...
The present work studied fracture behavior of a thin amorphous carbon film by nano-indentation using a sharp Berkovich indenter. The film was deposited onto a poly-ether-ether-ketone substrate using the plasma deposition method. After indentation tests, both radial cracks and picture-frame cracks were observed. A three-dimensional finite element (FE) model was developed to understand the stress evolution...
A magnetic field-enhanced arc ion plating (MFE-AIP) is utilized to deposit TiN films on the inner wall of a stainless-steel tube with inner diameter 36 mm and length from 108 to 288 mm. Three groups of magnetic field coils are designed and located at different positions, to produce axial magnetic field to focus and to guide the arc plasma beam to spread along the center axial direction of the tubular...
TiN/TiCN films were prepared on AZ31 by physical vapor deposition. Structural features and residual stress were determined by X-ray fluorescence (XRF), scanning electron microscopy (SEM) and based on the grazing incidence X-ray diffraction (GIXRD), respectively. Results show that films have (111) preferred orientation. With a increasing of the reaction gas ratio, the C + N and Ti content increases...
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